CMOS Device

A CMOS Device is an integrated circuit uses that complementary and symmetrical pairs of MOSFET Transistors.

• AKA: Complementary Metal-Oxide Semiconductor.
• Context:
  • It may achieve 7 nm transistor spacing by 2024.
  • It can contain a high density of Logic Functions.
• See: Multi-Gate Device.

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References

2011

• http://en.wikipedia.org/wiki/CMOS
  • Complementary metal–oxide–semiconductor (CMOS) (File:Loudspeaker.svg /ˈsiːmɒs/) is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. Frank Wanlass patented CMOS in 1967 (US patent 3,356,858).

    CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS). The words "complementary-symmetry" refer to the fact that the typical digital design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.

    Two important characteristics of CMOS devices are high noise immunity and low static power consumption. Significant power is only drawn when the transistors in the CMOS device are switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor-transistor logic (TTL) or NMOS logic. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.

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